Metal contact structure for solar cells that boosts efficiency by combining antireflection base and barrier layers.
The method alternates p- and n-doped regions at offset depths on a semiconductor wafer, then forms a metal contact stack that includes a base layer functioning as an antireflection layer plus a barrier layer to interface properly with both doped regions. This contact stack is designed to serve two roles at once—optical antireflection and electrical contact—rather than treating them as separate process steps. Before this patent expired, implementing the specific p/n offset doping contact structure required licensing from SunPower or risk of infringement.
Build high-efficiency crystalline-silicon solar modules using offset p/n doping and the combined antireflection-electrical contact stack.
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