Metal contact structure for solar cells that boosts efficiency by combining antireflection base and barrier layers.
The method alternates p- and n-doped regions at offset depths on a semiconductor wafer, then forms a metal contact stack that includes a base layer functioning as an antireflection layer plus a barrier layer to interface properly with both doped regions. This contact stack is designed to serve two roles at once—optical antireflection and electrical contact—rather than treating them as separate process steps. Before this patent expired, implementing the specific p/n offset doping contact structure required licensing from SunPower or risk of infringement.
Build high-efficiency crystalline-silicon solar modules using offset p/n doping and the combined antireflection-electrical contact stack.
In a solar cell having p doped regions and n doped regions alternately formed in a surface of a semiconductor wafer in offset levels through use of masking and etching techniques, metal contacts are made to the p regions and n regions by first forming a base layer contacting the p doped regions and n doped regions which functions as an antireflection layer, and then forming a barrier layer ...
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